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Table 4

Effect of gate oxide thickness and input spectra thresholds on the RadFET dose response: simulated dose in 10−14 Gy/pot (PRECISIO defaults set).

Thickness 1 MeV input 100 keV input % diff.
400 nm 0.757 ± 2.0% 0.820 ± 4.3% 8%
100 nm 0.719 ± 3.8% 0.816 ± 2.4% 12%

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