Effect of gate oxide thickness and input spectra thresholds on the RadFET dose response: simulated dose in 10−14 Gy/pot (PRECISIO defaults set).
|Thickness||1 MeV input||100 keV input||% diff.|
|400 nm||0.757 ± 2.0%||0.820 ± 4.3%||8%|
|100 nm||0.719 ± 3.8%||0.816 ± 2.4%||12%|
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.