Parametric analysis changing the energy thresholds of the simulations (PRECISIO defaults): dose in the SiO2 GO of the RadFET, in 10−14 Gy/pot.
|1 MeV||0.895 ± 2.5%|
|100 keV||0.768 ± 1.5%|
|10 keV||0.787 ± 1.7%|
|1 keV||0.757 ± 2.0%|
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