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Table 3
Parametric analysis changing the energy thresholds of the simulations (PRECISIO defaults): dose in the SiO2 GO of the RadFET, in 10−14 Gy/pot.
| Energy threshold | Dose |
|---|---|
| 1 MeV | 0.895 ± 2.5% |
| 100 keV | 0.768 ± 1.5% |
| 10 keV | 0.787 ± 1.7% |
| 1 keV | 0.757 ± 2.0% |
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