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Table 3

Parametric analysis changing the energy thresholds of the simulations (PRECISIO defaults): dose in the SiO2 GO of the RadFET, in 10−14 Gy/pot.

Energy threshold Dose
1 MeV 0.895 ± 2.5%
100 keV 0.768 ± 1.5%
10 keV 0.787 ± 1.7%
1 keV 0.757 ± 2.0%

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