Open Access

Table 2

Dose in 10−14 Gy/pot deposited within the air rack and the RadFET gate oxide in SiO2, using 1 MeV (with NEDEFA defaults) and 1 keV (using PRECISIO defaults) energy thresholds.

Scoring vol. 1 MeV th. 1 keV th. % diff.
Air cube 1.101 ± 0.7% 0.840 ± 0.5% 24%
RadFET 0.895 ± 2.5% 0.757 ± 2.0% 15%

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