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Table 2
Dose in 10−14 Gy/pot deposited within the air rack and the RadFET gate oxide in SiO2, using 1 MeV (with NEDEFA defaults) and 1 keV (using PRECISIO defaults) energy thresholds.
| Scoring vol. | 1 MeV th. | 1 keV th. | % diff. |
|---|---|---|---|
| Air cube | 1.101 ± 0.7% | 0.840 ± 0.5% | 24% |
| RadFET | 0.895 ± 2.5% | 0.757 ± 2.0% | 15% |
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