Dose in 10−14 Gy/pot deposited within the air rack and the RadFET gate oxide in SiO2, using 1 MeV (with NEDEFA defaults) and 1 keV (using PRECISIO defaults) energy thresholds.
|Scoring vol.||1 MeV th.||1 keV th.||% diff.|
|Air cube||1.101 ± 0.7%||0.840 ± 0.5%||24%|
|RadFET||0.895 ± 2.5%||0.757 ± 2.0%||15%|
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