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Fig. A.1.
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Deposited charge histogram of the A (on the left-hand section) and C (on the right-hand section) SiC-based diodes for power ranging from 20 to 250 kW and neutron fluences from around 3.2 × 1015 to 6.6–7.6 × 1016 cm−2 with 100k pulses recorded, and for a bias voltage of −400 V.
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