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Cited article:

Comparison of 4H-SiC Radiation Detectors Based on PN Junctions and Schottky Contacts

Nikola Kurucová, Andrea Šagatová, Bohumír Zaťko, Olivier Palais, Laurent Ottaviani, Damien Barakel, A. Lyoussi, M. Carette, E. Fanchini, M. Joyce, R. Hodák, L. Laera, P. Le Dû, C. Mariñas, M. Morichi, G. Llosá, S. Pospíšil, C. Reynard-Carette, L. Snoj and L. Vermeeren
EPJ Web of Conferences 338 10009 (2025)
https://doi.org/10.1051/epjconf/202533810009